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Capture simulation of a stacked MOSFET

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I'm new to Capture and am trying to simulate some high power pulse circuits.  I'm having trouble modeling the following switch: 

http://www.behlke.com/pdf/211-25-b.pdf

 I modeled as a S and set the on resistance, but I'd really like to model the resistance during the 45 nsec transition time going from very high to Ron (4.7 ohm.) 

I've tried using E and G inline w/ the switch and setting the gain to {EXP(-TIME/484n)} (and many other similiar formulas.)  I've tried modeling a resistor w/ {f(TIME)} type values.  A global parameter sweep doesn't seem to want to be a function of TIME.

 Those are all vague details, I know.  I'll be happy to explain any experiment in depth upon request, but if anyone wants to suggest a path forward I'm ready to start anew.


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